S.A. Kukushkin et al. 50,51 explained their coordinated substitution of atoms method for the growth of epitaxial SiC and in contrast it to additional traditional vapor phase deposition strategies. The authors made their method based upon the conversion of the top levels of the Si substrate surface into epitaxial SiC https://www.quora.com/profile/Trevor-Flatcher-2/Silicon-carbide-special-ceramics-in-modern-industry-in-a-variety-of-applications-Silicon-Carbide-Special-Ceramics-in-Mo